Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

Kuan Hsien Liu, Ting Chang Chang, Ming Siou Wu, Yi Syuan Hung, Pei Hua Hung, Tien Yu Hsieh, Wu-Ching Chou, Ann Kuo Chu, Simon M. Sze, Bo Liang Yeh

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

This Letter investigates abnormal channel width-dependent threshold voltage variation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Unlike drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, the wider the channel, the larger the threshold voltage observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider channel devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast IV measurement is utilized to demonstrate the self-heating induced anomalous channel width-dependent threshold voltage variation.

Original languageEnglish
Article number133503
JournalApplied Physics Letters
Volume104
Issue number13
DOIs
StatePublished - 31 Mar 2014

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