Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs

Dong Ru Hsieh, Yi De Chan, Po Yi Kuo, Tien-Sheng Chao*

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

In this paper, the influence of channel doping concentration and reverse boron penetration on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) FETs has been experimentally investigated and discussed. Effective carrier concentration (Neff) and threshold voltage (VTH) are found to be sensitive to doping concentration. Moreover, the positive shift in VTH and the degradation in the subthreshold behavior for PG JAM FETs are observed after an additional source/drain (S/D) activation process. Using a low thermal-budget S/D activation process, PG JAM FETs with a suitable channel doping concentration can show excellent electrical characteristics: 1) steep subthreshold swing of 86 mV/dec.; 2) low average subthreshold swing (A.S.S.) of 96 mV/dec.; and 3) high ON/OFF current ratio (ION/IOFF) of 7.7 \times 107 (ION at VG - VTH = -2 V and VD = -1 V).

Original languageEnglish
Pages (from-to)314-319
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Volume6
Issue number1
DOIs
StatePublished - 7 Feb 2018

Keywords

  • 3-D integrated circuits (ICs)
  • Pi-gate (PG)
  • channel doping concentration
  • junctionless accumulation mode (JAM)
  • poly-Si
  • reverse boron penetration

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