Investigation of BTI reliability for monolithic 3D 6T SRAM with ultra-thin-body GeOI MOSFETs

Vita Pi Ho Hu, Pin Su, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This paper investigates the impacts of negative and positive bias temperature instabilities (NBTI and PBTI) on the stability and performance of ultra-thin-body (UTB) GeOI 6T SRAM cells integrated in monolithic 3D scheme with interlayer coupling. Various bitcell layouts with different gate alignments of transistors from distinct layers are investigated. The worst case stress scenarios for read and write operations are analyzed. The optimized monolithic 3D UTB GeOI SRAM with the pulldown NFET tier stacked over the pull-up PFET tier and under forward PFET back-gate bias shows improvements in read stability and cell read-access time compared with the 2D UTB GeOI SRAM. Monolithic 3D UTB GeOI SRAM with high threshold voltage (Vth) design can enhance the improvements in stability and performance over 2D SRAM. Moreover, the optimized monolithic 3D UTB GeOI SRAM can mitigate the temporal degradations in stability and performance due to BTI stress because the BTI induced Vth degradations can be suppressed by interlayer coupling in monolithic 3D scheme.

Original languageEnglish
Title of host publicationISCAS 2016 - IEEE International Symposium on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2106-2109
Number of pages4
ISBN (Electronic)9781479953400
DOIs
StatePublished - 29 Jul 2016
Event2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016 - Montreal, Canada
Duration: 22 May 201625 May 2016

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2016-July
ISSN (Print)0271-4310

Conference

Conference2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016
CountryCanada
CityMontreal
Period22/05/1625/05/16

Keywords

  • GeOI
  • NBTI
  • PBTI
  • SRAM cell
  • Ultra-thin-body (UTB)
  • interlayer coupling
  • monolithic 3D integration

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