Investigation of bonding temperature for SU-8 materials in wafer-level hybrid bonding technology for 3D IC

C. A. Cheng*, C. T. Ko, Kuan-Neng Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Significant research has been performed in developing wafer-level metal/adhesive hybrid bonding technology by investigating bonding temperature optimization of SU-8 materials. The SU-8 wafers experience bonding failure when bonding temperature exceeds 275°C. As a result of the significant decomposition of epoxy rings and phenyl in plane bending above 275°C, Fourier Transform IR (FTIR) spectra measurements demonstrate that crosslinking inside SU-8 breaks and results in failed bonds. This research presents an evaluation of bonding quality and properties of SU-8 materials, which will assist the development of three dimension (3D) integration applications.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 26 Sep 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Keywords

  • 3D
  • FTIR
  • SU-8
  • Wafer level hybrid bonding

Fingerprint Dive into the research topics of 'Investigation of bonding temperature for SU-8 materials in wafer-level hybrid bonding technology for 3D IC'. Together they form a unique fingerprint.

Cite this