Investigation of backgate-bias dependence of intrinsic variability for UTB hetero-channel MOSFETs considering quantum confinement

Chang Hung Yu, Pin Su

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Variability of nanoscale MOSFETs has been an obstacle to CMOS scaling. For future CMOS devices, hetero-channel using Ge or III-V compounds such as InGaAs have been proposed as performance boosters [1-2]. The variability, however, is further aggravated for these high-mobility materials due to their higher permittivity. The ultra-thin body (UTB) structure has been considered as a promising solution to improve device electrostatic integrity (EI) [3-4]. Using the UTB with thin buried oxide (BOX) structure also enables efficient threshold voltage (Vth) modulation via backgate bias (Vbg) [3-4] for power-performance optimization. In addition, the adaptive body bias (ABB) technique has been widely used to compensate the die-to-die variation [5-6], whereas the within-die Vth variation also changes with V bg. With the scaling of device dimensions, the quantum confinement (QC) effect may become significant and impact the pertinent V bg-dependence of Vth variability for the UTB hetero-channel devices. In this work, using TCAD atomistic simulation, we investigate the impact of Vbg on the intrinsic variability of gate line-edge-roughness (LER) for UTB SOI, GeOI, and InGaAs-OI MOSFETs considering quantum confinement.

Original languageEnglish
Title of host publication71st Device Research Conference, DRC 2013 - Conference Digest
Pages61-62
Number of pages2
DOIs
StatePublished - 16 Dec 2013
Event71st Device Research Conference, DRC 2013 - Notre Dame, IN, United States
Duration: 23 Jun 201326 Jun 2013

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

Conference71st Device Research Conference, DRC 2013
CountryUnited States
CityNotre Dame, IN
Period23/06/1326/06/13

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  • Cite this

    Yu, C. H., & Su, P. (2013). Investigation of backgate-bias dependence of intrinsic variability for UTB hetero-channel MOSFETs considering quantum confinement. In 71st Device Research Conference, DRC 2013 - Conference Digest (pp. 61-62). [6633793] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2013.6633793