Investigation of anomalous inversion C-V characteristics for long-channel MOSFETs with leaky dielectrics: Mechanisms and reconstruction

Wei Lee*, Pin Su, Ke Wei Su, Chung Shi Chiang, Sally Liu

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

This paper investigates anomalous inversion capacitance-voltage (C-V) attenuation for MOSFETs with leaky dielectrics. We propose to reconstruct the inversion C-V characteristic based on long-channel MOSFETs using the concept of intrinsic input resistance (Rii). The concept of Rii has been validated by segmented BSIM4/SPICE simulation. Our reconstructed C-V characteristics show poly-depletion effects, which are not visible in the two-frequency three-element method and agree well with the North Carolina State University-CVC simulation results. The intrinsic input resistance dominates the overall gate-current-induced debiasing effect (∼95% for L = 20 μ;m) and can be extracted directly from the I-V characteristics. Due to its simplicity, our proposed Rii approach may provide an option for regular process monitoring purposes.

Original languageEnglish
Pages (from-to)104-109
Number of pages6
JournalIEEE Transactions on Semiconductor Manufacturing
Volume21
Issue number1
DOIs
StatePublished - 1 Feb 2008

Keywords

  • Capacitance-voltage (C-V)
  • Intrinsic input resistance
  • MOSFET
  • Metal-oxide- emiconductor (MOS) capacitance
  • Ultrathin gate oxide

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