Abstract
A high quality and ultraviolet-light transparent (UV-transparent) plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiNx) film is developed to form passivation layer for non-volatile memory devices. Comparing to the conventional PECVD SiNx film known to have tensile stress and opacity to ultraviolet-light (UV-light), the proposed SiNx film with very low compressive stress (<1 x 109 dyn/cm2) and excellent UV-transmit-tance (>70% for 1.6 μm-thick film) can be achieved. The film stress is strongly related to RF input power during deposition process. The UV-transmittance is influenced by pressure and S1H4/NH3 flow ratio. It is also shown that the UV-transmittance is closely correlated to refractive index (RI), film density as well as N/Si ratio inside the film. This SiNx film has been successfully applied to erasable programming read-only memory (EPROM’s) devices, and very good UV-erasability and reliability performances are demonstrated.
Original language | English |
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Pages (from-to) | 4736-4740 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics |
Volume | 34 |
Issue number | 9R |
DOIs | |
State | Published - 1 Jan 1995 |
Keywords
- EPROM
- PECVD
- Rl
- SiN
- UV-transmittance