Investigation of a high quality and ultraviolet-light transparent plasma-enhanced chemical vapor deposition silicon nitride film for non-volatile memory application

Chin Kun Wang; Tser Liang Ying; Chih Shih Wei; Lu Min Llu; Huang-Chung Cheng; Mou Shiung Lin

doi:10.1143/JJAP.34.4736

Investigation of a high quality and ultraviolet-light transparent plasma-enhanced chemical vapor deposition silicon nitride film for non-volatile memory application

Chin Kun Wang, Tser Liang Ying, Chih Shih Wei, Lu Min Llu, Huang-Chung Cheng, Mou Shiung Lin

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A high quality and ultraviolet-light transparent (UV-transparent) plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN_x) film is developed to form passivation layer for non-volatile memory devices. Comparing to the conventional PECVD SiNx film known to have tensile stress and opacity to ultraviolet-light (UV-light), the proposed SiN_x film with very low compressive stress (<1 x 10⁹ dyn/cm²) and excellent UV-transmit-tance (>70% for 1.6 μm-thick film) can be achieved. The film stress is strongly related to RF input power during deposition process. The UV-transmittance is influenced by pressure and S1H₄/NH₃ flow ratio. It is also shown that the UV-transmittance is closely correlated to refractive index (RI), film density as well as N/Si ratio inside the film. This SiN_x film has been successfully applied to erasable programming read-only memory (EPROM’s) devices, and very good UV-erasability and reliability performances are demonstrated.

Original language	English
Pages (from-to)	4736-4740
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	34
Issue number	9R
DOIs	https://doi.org/10.1143/JJAP.34.4736
State	Published - 1 Jan 1995

Keywords

EPROM
PECVD
Rl
SiN
UV-transmittance

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title = "Investigation of a high quality and ultraviolet-light transparent plasma-enhanced chemical vapor deposition silicon nitride film for non-volatile memory application",

abstract = "A high quality and ultraviolet-light transparent (UV-transparent) plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiNx) film is developed to form passivation layer for non-volatile memory devices. Comparing to the conventional PECVD SiNx film known to have tensile stress and opacity to ultraviolet-light (UV-light), the proposed SiNx film with very low compressive stress (<1 x 109 dyn/cm2) and excellent UV-transmit-tance (>70% for 1.6 μm-thick film) can be achieved. The film stress is strongly related to RF input power during deposition process. The UV-transmittance is influenced by pressure and S1H4/NH3 flow ratio. It is also shown that the UV-transmittance is closely correlated to refractive index (RI), film density as well as N/Si ratio inside the film. This SiNx film has been successfully applied to erasable programming read-only memory (EPROM{\textquoteright}s) devices, and very good UV-erasability and reliability performances are demonstrated.",

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author = "Wang, {Chin Kun} and Ying, {Tser Liang} and Wei, {Chih Shih} and Llu, {Lu Min} and Huang-Chung Cheng and Lin, {Mou Shiung}",

year = "1995",

month = jan,

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doi = "10.1143/JJAP.34.4736",

language = "English",

volume = "34",

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journal = "Japanese Journal of Applied Physics",

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Investigation of a high quality and ultraviolet-light transparent plasma-enhanced chemical vapor deposition silicon nitride film for non-volatile memory application. / Wang, Chin Kun; Ying, Tser Liang; Wei, Chih Shih; Llu, Lu Min; Cheng, Huang-Chung; Lin, Mou Shiung.

In: Japanese Journal of Applied Physics, Vol. 34, No. 9R, 01.01.1995, p. 4736-4740.

Research output: Contribution to journal › Article › peer-review

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AU - Wang, Chin Kun

AU - Ying, Tser Liang

AU - Wei, Chih Shih

AU - Llu, Lu Min

AU - Cheng, Huang-Chung

AU - Lin, Mou Shiung

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N2 - A high quality and ultraviolet-light transparent (UV-transparent) plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiNx) film is developed to form passivation layer for non-volatile memory devices. Comparing to the conventional PECVD SiNx film known to have tensile stress and opacity to ultraviolet-light (UV-light), the proposed SiNx film with very low compressive stress (<1 x 109 dyn/cm2) and excellent UV-transmit-tance (>70% for 1.6 μm-thick film) can be achieved. The film stress is strongly related to RF input power during deposition process. The UV-transmittance is influenced by pressure and S1H4/NH3 flow ratio. It is also shown that the UV-transmittance is closely correlated to refractive index (RI), film density as well as N/Si ratio inside the film. This SiNx film has been successfully applied to erasable programming read-only memory (EPROM’s) devices, and very good UV-erasability and reliability performances are demonstrated.

AB - A high quality and ultraviolet-light transparent (UV-transparent) plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiNx) film is developed to form passivation layer for non-volatile memory devices. Comparing to the conventional PECVD SiNx film known to have tensile stress and opacity to ultraviolet-light (UV-light), the proposed SiNx film with very low compressive stress (<1 x 109 dyn/cm2) and excellent UV-transmit-tance (>70% for 1.6 μm-thick film) can be achieved. The film stress is strongly related to RF input power during deposition process. The UV-transmittance is influenced by pressure and S1H4/NH3 flow ratio. It is also shown that the UV-transmittance is closely correlated to refractive index (RI), film density as well as N/Si ratio inside the film. This SiNx film has been successfully applied to erasable programming read-only memory (EPROM’s) devices, and very good UV-erasability and reliability performances are demonstrated.

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Investigation of a high quality and ultraviolet-light transparent plasma-enhanced chemical vapor deposition silicon nitride film for non-volatile memory application

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