Investigation of A 450 V rating silicon-on-insulator lateral-double- diffused-metal-oxide-semiconductor fabrication by 12/25/5/40 V bipolar-complementary metal-oxide-semiconductor double-diffused metal-oxide-semiconductor process on bulk silicon substrate

Fang Long Chang*, Ming Jang Lin, C. W. Liaw, Ta Chuan Liao, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this study, traditional bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) (BCD) technology, which is designed for only lateral bipolar (Bipolar, 12V BVCEO and 25V BVCBO). complementary metal oxide semiconductor (CMOS, 1.2V threshold voltage) and double diffused metal oxide semiconductor (DMOS, 40 V breakdown voltage) transistors on the bulk silicon wafer, has been successfully utilized directly in silicon on insulator lateral double diffused metal oxide semiconductor (SOI LDMOS) for the first time without changing any trial parameters. To simultaneously display the characteristics of high-power, high-speed and high-frequency, the results of output characteristics, switch and microwave performance must be moderate instead of optimum. In addition, according to the experimental results, it is proved that Bulk-BCD technology simultaneously enables high-speed, high-frequency and high-blocking-voltage applications - such as those in high-voltage integrated circuit switches (ns-range) and RF power amplifiers (MHz range to GHz range)-using a SOI wafer.

Original languageEnglish
Pages (from-to)4119-4123
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number7 A
DOIs
StatePublished - 1 Jul 2004

Keywords

  • Bipolar-CMOS-DMOS technology
  • Radio frequency (RF) power amplifier
  • SOA
  • SOI-LDMOS
  • Switch

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