Investigation into the performance of CNT-interconnects by spin coating technique

Wei Chih Chiu*, Bing-Yue Tsui

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this work, we proposed a simple fabrication process, spin coating and dry etching, to construct CNT-interconnects. The CNT-interconnects formed by the slow rate spin coating method have conductivity of more than 102 (S/cm) and the CNT-interconnects with 102 square numbers possess about 30% conductive probability. In addition, we inserted metal bridges into 1000-μm-long CNT-interconnects to effectively facilitate the performance.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Pages240-241
Number of pages2
DOIs
StatePublished - 13 Mar 2013
Event2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore
Duration: 2 Jan 20134 Jan 2013

Publication series

NameProceedings - Winter Simulation Conference
ISSN (Print)0891-7736

Conference

Conference2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
CountrySingapore
CitySingapore
Period2/01/134/01/13

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