Investigation into gate-to-source capacitance induced by highly efficient band-to-band tunneling in p-channel Ge epitaxial tunnel layer tunnel FET

Pei Yu Wang, Bing-Yue Tsui

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The gate-to-source capacitance (CGS) in the p-channel tunnel FET (pTFET) with a Ge epitaxial tunnel layer (ETL) structure is investigated. The characteristic of CGS is revealed and studied with various frequencies and temperatures. Due to the highly efficient band-to-band tunneling (BTBT) in the Ge ETL pTFET, the minority carriers for the source can be generated by the BTBT process and can respond with the gate voltage. Therefore, the contribution of CGS to the total gate capacitance in the ON-state would increase, which results in a decrease of the gate-to-drain capacitance. This property is beneficial to the suppression of the Miller capacitance effect on the TFET-based circuit.

Original languageEnglish
Article number7429736
Pages (from-to)1788-1790
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume63
Issue number4
DOIs
StatePublished - 1 Apr 2016

Keywords

  • Band-to-band tunneling (BTBT)
  • gate-to-source capacitance (CGS)
  • tunnel FET (TFET)

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