Investigation and simulation of work-function variation for III-V broken-gap heterojunction tunnel FET

Chih Wei Hsu, Ming Long Fan, Vita Pi Ho Hu, Pin Su*

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

This paper investigates and compares the impacts of metal-gate work-function variation (WFV) on III-V heterojunction tunnel FET (HTFET), homojunction TFET, and FinFET devices using a novel Voronoi method to capture the realistic metal-gate grain patterns for Technology Computer Aided Design atomistic simulations. Due to the broken-gap nature, HTFET shows significantly steeper subthreshold slope and higher susceptibility to WFV near OFF state. For ON current variation, both the HTFET and homojunction TFET show better immunity to WFV than the III-V FinFET. Device design using source-side underlap to mitigate the impact of WFV on HTFET is also assessed.

Original languageEnglish
Article number7053925
Pages (from-to)194-199
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Volume3
Issue number3
DOIs
StatePublished - 1 May 2015

Keywords

  • Heterojunction Tunnel FET (HTFET)
  • work-function variation (WFV)

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