Investigation and comparison of work function variation for FinFET and UTB SOI devices using a voronoi approach

Shao Heng Chou*, Ming Long Fan, Pin Su

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

Using a novel Voronoi method that can provide a more realistic representation of metal-gate granularity, we investigate and compare the impact of work-function variation (WFV) on FinFET and ultrathin body (UTB) silicon-on-insulator (SOI) devices. Our study indicates that, for a given electrostatic integrity and total effective gate area, the FinFET device exhibits better immunity to WFV than its UTB SOI counterpart. We further show that, unlike other sources of random variation, the WFV cannot be suppressed by equivalent oxide thickness scaling.

Original languageEnglish
Article number6478784
Pages (from-to)1485-1489
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume60
Issue number4
DOIs
StatePublished - 19 Mar 2013

Keywords

  • FinFET
  • ultrathin body silicon-on-insulator MOSFET
  • variability
  • Voronoi
  • work-function variation (WFV)

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