Investigation and comparison of the gan-based light-emitting diodes grown on high aspect ratio nano-cone and general micro-cone patterned sapphire substrate

Jhih Kai Huang, Da Wei Lin, Min Hsiung Shih, Kang Yuan Lee, Jyun Rong Chen, Hung Weng Huang, Shou Yi Kuo, Chung Hsiang Lin, Po-Tsung Lee, Gou Chung Chi, Hao-Chung Kuo

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

In this paper, we demonstrated the high performance GaN-based LEDs by using a high aspect ratio cone-shape nano-patterned sapphire substrate (HAR-NPSS). We utilized nano-imprint lithography (NIL) and dry-etching system to fabricate a high depth HAR-NPSS. The micro-scale patterned sapphire substrate (PSS) was also used for comparison. A great enhancement of light output was observed when GaN-based LEDs were grown on a HAR-NPSS or a PSS. The light output power of LEDs with a HAR-NPSS and LEDs with a PSS were enhanced of 49 and 38% compared to LEDs with a unpatterned sapphire substrate. The high output power of the LED with a HAR-NPSS indicated that the technology of NAR-NPSS not only can improve the crystalline quality of GaN-based LEDs but also a promising development to a NPSS.

Original languageEnglish
Article number6547174
Pages (from-to)947-952
Number of pages6
JournalIEEE/OSA Journal of Display Technology
Volume9
Issue number12
DOIs
StatePublished - 1 Dec 2013

Keywords

  • GaN
  • light-emitting diodes (LEDs)
  • nano-imprint lithography (NIL)
  • nano-patterned sapphire substrate (NPSS)

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