Investigation and comparison of design space for ultra-thin-body GeOI/SOI negative capacitance FETs

Ho Pei Lee, Chien Lin Yu, Wei Xiang You, Pin Su

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Using the concept of design space, we have investigated and compared the subthreshold characteristics of UTB NCFETs with Ge/Si channel. Our results indicate that high permittivity channel is more suitable for NCFET design because of the high Cch. Furthermore, as channel length shrinks, the optimal SS of the NCFET becomes smaller due to the drain coupling (CDIBL). In other words, GeOI NCFETs can achieve lower SS than the Si counterpart due to their higher Cch and CDIBL.

Original languageEnglish
Title of host publication2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509058051
DOIs
StatePublished - 7 Jun 2017
Event2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, Taiwan
Duration: 24 Apr 201727 Apr 2017

Publication series

Name2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Conference

Conference2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
CountryTaiwan
CityHsinchu
Period24/04/1727/04/17

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