@inproceedings{937045190e874c2084bb9cece1028c83,
title = "Investigation and benchmark of intrinsic drain-induced-barrier-lowering (DIBL) for ultra-thin-body III-V-on-insulator n-MOSFETs",
abstract = "The intrinsic drain-induced-barrier-lowering (DIBL) characteristics of ultra-thin-body (UTB) MOSFETs with various III-V channel materials (such as GaAs, In0.53Ga0.47As, In0.7Ga0.3As, InAs, In0.2Ga0.8Sb, InSb, etc.) has been investigated and benchmarked with the Si device. Our results indicate that the DIBL of the III-V-on-insulator devices can be worse than what permittivity predicts. The underlying mechanism is proposed. We also show that, with the aid of quantum confinement (along the channel-thickness direction), the DIBL of the III-V devices can be comparable to the Si device.",
keywords = "drain-induced-barrier-lowering (DIBL), III-V, quantum confinement, ultra-thin-body (UTB) structure",
author = "Yu, {Chang Hung} and Pin Su",
year = "2015",
month = jan,
day = "1",
doi = "10.1109/NANO.2015.7388693",
language = "English",
series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "666--669",
booktitle = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
address = "United States",
note = "null ; Conference date: 27-07-2015 Through 30-07-2015",
}