Investigation and benchmark of intrinsic drain-induced-barrier-lowering (DIBL) for ultra-thin-body III-V-on-insulator n-MOSFETs

Chang Hung Yu, Pin Su

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The intrinsic drain-induced-barrier-lowering (DIBL) characteristics of ultra-thin-body (UTB) MOSFETs with various III-V channel materials (such as GaAs, In0.53Ga0.47As, In0.7Ga0.3As, InAs, In0.2Ga0.8Sb, InSb, etc.) has been investigated and benchmarked with the Si device. Our results indicate that the DIBL of the III-V-on-insulator devices can be worse than what permittivity predicts. The underlying mechanism is proposed. We also show that, with the aid of quantum confinement (along the channel-thickness direction), the DIBL of the III-V devices can be comparable to the Si device.

Original languageEnglish
Title of host publicationIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages666-669
Number of pages4
ISBN (Electronic)9781467381550
DOIs
StatePublished - 1 Jan 2015
Event15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
Duration: 27 Jul 201530 Jul 2015

Publication series

NameIEEE-NANO 2015 - 15th International Conference on Nanotechnology

Conference

Conference15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
CountryItaly
CityRome
Period27/07/1530/07/15

Keywords

  • drain-induced-barrier-lowering (DIBL)
  • III-V
  • quantum confinement
  • ultra-thin-body (UTB) structure

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