This paper investigates and analyzes the matching properties of nanoscale strained MOSFETs under various bias conditions. Through a comprehensive comparison between coprocessed strained and unstrained PMOSFETs, the impact of process-induced uniaxial strain on the matching performance of MOS devices has been assessed and analyzed. Our examination indicates that, in the low-gate-voltage-overdrive (|Vgst|) regime, the normalized drain current mismatch (σ(ΔId)/Id) of the strained device is almost the same as that of the unstrained one at a given transconductance to drain current ratio (gmId). In the high |Vgst| linear regime, the σ(ΔId)/I d for the strained device is smaller than that of the unstrained one because of its smaller normalized current factor mismatch. In the high |V gst| saturation regime, the improvement in the σ(ΔI d)/Id for the strained device is further enhanced because of the reduced critical electric field at which the carrier velocity becomes saturated.
- Transconductance to drain current ratio
- Uniaxial strained silicon