Investigation and analysis of mismatching properties for nanoscale strained MOSFETs

Jack Jyun Yan Kuo, William Po Nien Chen, Pin Su

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3 Scopus citations

Abstract

This paper investigates and analyzes the matching properties of nanoscale strained MOSFETs under various bias conditions. Through a comprehensive comparison between coprocessed strained and unstrained PMOSFETs, the impact of process-induced uniaxial strain on the matching performance of MOS devices has been assessed and analyzed. Our examination indicates that, in the low-gate-voltage-overdrive (|Vgst|) regime, the normalized drain current mismatch (σ(ΔId)/Id) of the strained device is almost the same as that of the unstrained one at a given transconductance to drain current ratio (gmId). In the high |Vgst| linear regime, the σ(ΔId)/I d for the strained device is smaller than that of the unstrained one because of its smaller normalized current factor mismatch. In the high |V gst| saturation regime, the improvement in the σ(ΔI d)/Id for the strained device is further enhanced because of the reduced critical electric field at which the carrier velocity becomes saturated.

Original languageEnglish
Article number5075629
Pages (from-to)248-253
Number of pages6
JournalIEEE Transactions on Nanotechnology
Volume9
Issue number2
DOIs
StatePublished - 1 Mar 2010

Keywords

  • Fluctuation
  • Mismatch
  • Transconductance to drain current ratio
  • Uniaxial strained silicon
  • Variation

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