Investigating the gas sensing mechanism of the vertical polymer space-charge-limited transistor

Chang Hung Li*, Hsiao-Wen Zan, Chih Kuan Yu, Hsin-Fei Meng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A high-sensitivity gas sensor based on SCLT is demonstrated in this paper. The oxidizing and reducing gases which act as electron dedoping (e-dedoping) and doping (edoping) agents on the transistor active layer is investigated. Dedoping and doping the active layer varies the potential distribution in the vertical channel, and changes the output current density. The lowest detectable concentration of ammonia was 30 ppb at a base-to-emitter voltage as -0.2 V and collector-to-emitter voltage as -1.2 V.

Original languageEnglish
Title of host publicationIEEE SENSORS 2012 - Proceedings
DOIs
StatePublished - 1 Dec 2012
Event11th IEEE SENSORS 2012 Conference - Taipei, Taiwan
Duration: 28 Oct 201231 Oct 2012

Publication series

NameProceedings of IEEE Sensors

Conference

Conference11th IEEE SENSORS 2012 Conference
CountryTaiwan
CityTaipei
Period28/10/1231/10/12

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