Investigating electron depletion effect in amorphous indium-gallium-zinc- oxide thin-film transistor with a floating capping metal by technology computer-aided design simulation and leakage reduction

Ting Chou Lu, Wei Tsung Chen, Hsiao-Wen Zan*, Ming-Dou Ker

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The electron distribution in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with a floating metal-semiconductor (MS) back interface is analyzed using a technology computer-aided design (TCAD) model. The channel geometry (i.e., length and thickness) effect is carefully investigated. At a high work function (i.e., 5 eV) of the capping metal, electrons inside a-IGZO are mostly removed by the capping metal (electron depletion effect). The depletion of the IGZO film leads to an increase in threshold voltage in a-IGZO TFT. TCAD simulation reveals that increasing channel length and decreasing IGZO thickness significantly enhance such an electron depletion effect. Finally, the electron depletion effect is applied to a-IGZO TFT with a high-conductivity IGZO film to greatly suppress the leakage current by over 5 orders.

Original languageEnglish
Article number064302
JournalJapanese Journal of Applied Physics
Volume53
Issue number6
DOIs
StatePublished - 1 Jan 2014

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