Inversion-Layer Capacitance and Mobility of Very Thin Gate-Oxide MOSFET's

Mong Song Liang; Jeong Yeol Cho; Ping Keung Ko; Chen-Ming Hu

doi:10.1109/T-ED.1986.22502

Inversion-Layer Capacitance and Mobility of Very Thin Gate-Oxide MOSFET's

Mong Song Liang, Jeong Yeol Cho, Ping Keung Ko, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

103 Scopus citations

Abstract

Inversion-layer capacitance has been experimentally characterized and identified to be the main cause of the second-order thick-ness-dependence, of MOSFET characteristics. Field-dependent channel mobilities of both electrons and holes were independent of gate-oxide thicknesses from 50 to 450 Å, e.g., there is no evidence of the alleged mobility degradation in very thin gate-oxide MOSFET's. Subthreshold slope, insignificantly affected by the inversion-layer capacitance, follows the simple theory down to ∽35 Å of oxide thickness. The empirical equations for inversion-layer capacitance and mobilities versus electric field are proposed.

Original language	English
Pages (from-to)	409-413
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	33
Issue number	3
DOIs	https://doi.org/10.1109/T-ED.1986.22502
State	Published - 1 Jan 1986

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abstract = "Inversion-layer capacitance has been experimentally characterized and identified to be the main cause of the second-order thick-ness-dependence, of MOSFET characteristics. Field-dependent channel mobilities of both electrons and holes were independent of gate-oxide thicknesses from 50 to 450 {\AA}, e.g., there is no evidence of the alleged mobility degradation in very thin gate-oxide MOSFET's. Subthreshold slope, insignificantly affected by the inversion-layer capacitance, follows the simple theory down to ∽35 {\AA} of oxide thickness. The empirical equations for inversion-layer capacitance and mobilities versus electric field are proposed.",

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AU - Hu, Chen-Ming

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AB - Inversion-layer capacitance has been experimentally characterized and identified to be the main cause of the second-order thick-ness-dependence, of MOSFET characteristics. Field-dependent channel mobilities of both electrons and holes were independent of gate-oxide thicknesses from 50 to 450 Å, e.g., there is no evidence of the alleged mobility degradation in very thin gate-oxide MOSFET's. Subthreshold slope, insignificantly affected by the inversion-layer capacitance, follows the simple theory down to ∽35 Å of oxide thickness. The empirical equations for inversion-layer capacitance and mobilities versus electric field are proposed.

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