Inversion-Layer Capacitance and Mobility of Very Thin Gate-Oxide MOSFET's

Mong Song Liang, Jeong Yeol Cho, Ping Keung Ko, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

103 Scopus citations

Abstract

Inversion-layer capacitance has been experimentally characterized and identified to be the main cause of the second-order thick-ness-dependence, of MOSFET characteristics. Field-dependent channel mobilities of both electrons and holes were independent of gate-oxide thicknesses from 50 to 450 Å, e.g., there is no evidence of the alleged mobility degradation in very thin gate-oxide MOSFET's. Subthreshold slope, insignificantly affected by the inversion-layer capacitance, follows the simple theory down to ∽35 Å of oxide thickness. The empirical equations for inversion-layer capacitance and mobilities versus electric field are proposed.

Original languageEnglish
Pages (from-to)409-413
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume33
Issue number3
DOIs
StatePublished - 1 Jan 1986

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