Introduction of new materials into CMOS devices

Hiroshi Iwai*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

With the progress of recent smart society, demand for high performance low-power CMOS devices becomes stronger and stronger. Corresponding to the situation, the downsizing of CMOS device has been accelerated significantly. In order to solve the problem inherent in the downsizing, new structures and new materials are being aggressively introduced into MOSFETs. They are, for example, nanowire channel, metal/high-k gate stack, metal/silicide source/drain. In this paper, the status of the new material introduction to CMOS devices is described.

Original languageEnglish
Title of host publicationHigh Purity Silicon 12
Pages13-20
Number of pages8
Edition5
DOIs
StatePublished - 2012
Event12th High Purity Silicon Symposium - 222nd ECS Meeting - Honolulu, HI, United States
Duration: 7 Oct 201211 Oct 2012

Publication series

NameECS Transactions
Number5
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference12th High Purity Silicon Symposium - 222nd ECS Meeting
CountryUnited States
CityHonolulu, HI
Period7/10/1211/10/12

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