Intrinsic parameter fluctuations on current mirror circuit with different aspect ratio of 16-nm Multi-Gate MOSFET

Hui Wen Cheng, Chun Yen Yiu, Thet Thet Khaing, Yiming Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this study, we examine the dependency of current mirror circuit characteristics on channel-fin aspect-ratio (AR = fin height/the fin width) of 16-nm multi-gate MOSFET and device's intrinsic parameter fluctuation including metal-gate work-function fluctuation (WKF), random-dopant fluctuation (RDF), process-variation effect (PVE), and oxide-thickness fluctuation (OTF). For n-and p-type current mirror circuits, the fluctuations dominated by RDF and WKF, respectively, could be suppressed by high AR of devices due to improved driving current. For n-and p-type current mirror circuits, IOUT fluctuation dominated by RDF and WKF in FinFET (AR = 2) is 2.8 and 2.5 times smaller than that of quasi-planar (AR = 0.5) device, respectively.

Original languageEnglish
Title of host publication2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs
StatePublished - 2010
Event2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States
Duration: 13 Jun 201014 Jun 2010

Publication series

Name2010 Silicon Nanoelectronics Workshop, SNW 2010

Conference

Conference2010 15th Silicon Nanoelectronics Workshop, SNW 2010
CountryUnited States
CityHonolulu, HI
Period13/06/1014/06/10

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