Intracavity PPLN crystals for ultra-low-voltage laser Q-switching and high-efficiency wavelength conversion

Y. H. Chen*, Y. C. Huang, Y. Y. Lin, Yung-Fu Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

We report to the best of our knowledge the lowest switching voltage in an electro-optically Q-switched Nd:YVO4 laser by using a 13-mm long, 14-μm-period PPLN crystal as a Pockels cell. A switching voltage as low as̃ 50V in the PPLN crystal was sufficient to hold off the lasing of the Q-switched laser at a pump power more than two times above its continuous-wave threshold. When the PPLN Q-switch was driven by a 100-V voltage at 6.5 kHz, we obtained 0.9-kW laser peak power from this 1-Wdiode-pumped Nd:YVO4 laser system with 13% output coupling. When the PPLN Pockels cellwas cascaded with a 5-cm long, 30-μm-period PPLN crystal, we produced ̃ μJ/pulse energy at 1.59 μm from optical parametric generation inside the actively Q-switched laser.

Original languageEnglish
Pages (from-to)889-896
Number of pages8
JournalApplied Physics B: Lasers and Optics
Volume80
Issue number7
DOIs
StatePublished - 1 Jun 2005

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