Intersublevel electroluminescence from In0.4Ga0.6As/GaAs quantum dots in quantum cascade heterostructure with GaAsN/GaAs superlattice

C. H. Fischer*, P. Bhattacharya, Peichen Yu

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Infrared light emission is demonstrated from In0.4Ga0.6As self-organised quantum dots in a quantum cascade structure incorporating a GaAs/GaAsN chirped superlattice. A TE polarised emission peak is observed at 22 μm, corresponding to the calculated first-excited to ground-state transition. Other emission peaks also correspond to predicted values.

Original languageEnglish
Pages (from-to)1537-1538
Number of pages2
JournalElectronics Letters
Volume39
Issue number21
DOIs
StatePublished - 16 Oct 2003

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