Interplay of Nanoscale, Hybrid P3HT/ZTO Interface on Optoelectronics and Photovoltaic Cells

Jian Jhong Lai, Yu Hsun Li, Bo Rui Feng, Shiow Jing Tang, Wen-Bin Jian*, Chuan Min Fu, Jiun-Tai Chen, Xu Wang, Pooi See Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Photovoltaic effects in poly(3-hexylthiophene-2,5-diyl) (P3HT) have attracted much attention recently. Here, natively p-type doped P3HT nanofibers and n-type doped zinc tin oxide (ZTO) nanowires are used for making not only field-effect transistors (FETs) but also p-n nanoscale diodes. The hybrid P3HT/ZTO p-n heterojunction shows applications in many directions, and it also facilitates the investigation of photoelectrons and photovoltaic effects on the nanoscale. As for applications, the heterojunction device shows a simultaneously high on/off ratio of n- and p-type FETs, gatable p-n junction diodes, tristate buffer devices, gatable photodetectors, and gatable solar cells. On the other hand, P3HT nanofibers are taken as a photoactive layer and the role played by the p-n heterojunction in the photoelectric and photovoltaic effects is investigated. It is found that the hybrid P3HT/ZTO p-n heterojunction assists in increasing photocurrents and enhancing photovoltaic effects. Through the controllable gating of the heterojunction, we can discuss the background mechanisms of photocurrent generation and photovoltaic energy harvesting.

Original languageEnglish
Pages (from-to)33212-33219
Number of pages8
JournalACS Applied Materials and Interfaces
Issue number38
StatePublished - 27 Sep 2017


  • P3HT nanofiber
  • gatable diode
  • photodetector
  • photovoltaic cell
  • zinc tin oxide nanowire

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