Internal structure and electrical properties of Ge quantum dot in single-electron transistors

K. H. Chen, I. H. Chen, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have developed a simple, manageable, and selforganized manner - thermally oxidizing SiGe nanocavity for precisely controlling Ge quantum dot (QD) number, position, and tunnel path, which is crucial for effective single-electron tunneling devices. The internal structure properties of Ge QDs were systematically characterized. The effectiveness of Ge QD placement is evidenced by high performance Ge QD single electron transistors (SETs), featuring with clear Coulomb staircase and Coulomb-blockade oscillation behaviors at room temperature.

Original languageEnglish
Title of host publication2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs
StatePublished - 22 Oct 2010
Event2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States
Duration: 13 Jun 201014 Jun 2010

Publication series

Name2010 Silicon Nanoelectronics Workshop, SNW 2010

Conference

Conference2010 15th Silicon Nanoelectronics Workshop, SNW 2010
CountryUnited States
CityHonolulu, HI
Period13/06/1014/06/10

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    Chen, K. H., Chen, I. H., & Li, P-W. (2010). Internal structure and electrical properties of Ge quantum dot in single-electron transistors. In 2010 Silicon Nanoelectronics Workshop, SNW 2010 [5562546] (2010 Silicon Nanoelectronics Workshop, SNW 2010). https://doi.org/10.1109/SNW.2010.5562546