We had investigated the potential of non-polar a-plane InGaN/GaN multiple quantum well (MQW) for high indium content blue/green emission. By comparisons of a-plane and c-plane MQW with different indium compositions, we concluded that without piezoelectric field, high indium content non-polar a-plane InGaN/GaN MQW is suitable for green light emitting diode (LED). Furthermore, similar to c-plane GaN InGaN/GaN MQW, the localized state might enhance the performance of a-plane MQW while the indium composition about 24% although the threading dislocation density (TDD) is quite high. On the other hand, the indium phase separation might also occur on a-plane InGaN/GaN MQW while the indium composition about 30% so that the photoluminescence intensity of the sample 810°C low down and spectrum bandwidth broaden.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|State||Published - May 2008|
|Event||7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States|
Duration: 16 Sep 2007 → 21 Sep 2007