Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions

Te Chung Wang, Tsung Shine Ko, Tien-chang Lu*, Hao-Chung Kuo, Run Ci Gao, Jenq Dar Tsay, Sing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

We had investigated the potential of non-polar a-plane InGaN/GaN multiple quantum well (MQW) for high indium content blue/green emission. By comparisons of a-plane and c-plane MQW with different indium compositions, we concluded that without piezoelectric field, high indium content non-polar a-plane InGaN/GaN MQW is suitable for green light emitting diode (LED). Furthermore, similar to c-plane GaN InGaN/GaN MQW, the localized state might enhance the performance of a-plane MQW while the indium composition about 24% although the threading dislocation density (TDD) is quite high. On the other hand, the indium phase separation might also occur on a-plane InGaN/GaN MQW while the indium composition about 30% so that the photoluminescence intensity of the sample 810°C low down and spectrum bandwidth broaden.

Original languageEnglish
Pages (from-to)2161-2163
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
StatePublished - May 2008
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 16 Sep 200721 Sep 2007

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