Internal passivation for suppression of device instabilities induced by backend processes

Vivek Jain*, Dipankar Pramanik, Subhash R. Nariani, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

The concept of internal passivation has been introduced as a means of suppressing device degradation due to backend processes. The proposed concept has been demonstrated by tailoring the composition of a PECVD (plasma-enhanced chemical vapor deposition) oxide film to achieve such an internal passivation, resulting in a process with built-in reliability. Specifically, field inversion and hot carrier degradation induced by backend processing have been suppressed. The results have been duplicated on two different commercially available PECVD systems, establishing that neither the problem nor the solution was related to a specific deposition system.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherPubl by IEEE
Pages11-15
Number of pages5
ISBN (Print)078030473X
DOIs
StatePublished - 1 Mar 1992
EventProceedings of the 30th Annual International Reliability Physics Symposium - San Diego, CA, USA
Duration: 31 Mar 19922 Apr 1992

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Conference

ConferenceProceedings of the 30th Annual International Reliability Physics Symposium
CitySan Diego, CA, USA
Period31/03/922/04/92

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