Interference of ESD protection diodes on RF performance in Giga-Hz RF circuits

Ming-Dou Ker*, Chien Ming Lee

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

The power gain and noise figure of two kinds of diode structures in a 0.25-μm CMOS process is investigated by using the two-port GSG measurement in radio-frequency region (∼GHz). The power gain is degraded by ESD device with larger layout area and more serious at higher operating frequency. The noise figure is increased by ESD device with larger layout area and also is more serious at higher frequency. After the comparison on the power gain and MM ESD level between the poly-gated diode and the STI diode, the poly-gated diode is more suitable for ESD protection in RF circuits.

Original languageEnglish
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume1
DOIs
StatePublished - 14 Jul 2003
EventProceedings of the 2003 IEEE International Symposium on Circuits and Systems - Bangkok, Thailand
Duration: 25 May 200328 May 2003

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