Interfacial reactions in Sn/Bi2Te3, Sn/Bi 2Se3 and Sn/Bi2(Te1-xSe x)3 couples

Sinn Wen Chen*, Chih Yu Wu, Hsin-Jay Wu, Wan Ting Chiu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Bi2(Te1-xSex)3 is an important kind of n-type thermoelectric material. In this study, interfacial reactions at 250 °C in the Sn/Bi2Te3, Sn/Bi2Se 3 and Sn/Bi2(Te1-xSex)3 couples are examined. In the Sn/Bi2Te3 couple, the reaction zone is found to be non-planar and the reaction path is liquid/(liquid + SnTe)/Bi2Te3. But with only 2.0 at.%Se addition to the Bi2Te3 substrate, very different reaction results are observed. In the Sn/Bi2(Te1-xSex)3 couple, the reaction layers are planar, and the reaction path is liquid/SnTe/BiTex/Bi2(Te1-xSex) 3. In the Sn/Bi2Se3 couple, the reaction layers are also planar, the reaction path is liquid/SnSe/BiSe/Bi2Se 3, and the Bi content in the SnSe phase varies. The growth rates in the Sn/Bi2Te3 couples are very fast, and the reaction layer is as thick as 1174 μm in just 15 min. Very dramatic reduction of growth rates has been observed with Se addition to the substrates, and the reaction layer is only 9 μm in the Sn/Bi2(Te2.9Se 0.1) couples after reaction for 30 min.

Original languageEnglish
Pages (from-to)313-318
Number of pages6
JournalJournal of Alloys and Compounds
Volume611
DOIs
StatePublished - 25 Oct 2014

Keywords

  • Interfacial reaction
  • Thermoelectric

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