INTERFACIAL REACTION IN MOS STRUCTURES.

E. I. Alessandrini*, D. R. Campbell, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

9 Scopus citations

Abstract

The kinetics of the reduction of SiO//2 in Au/SiO//2/Si structures has been studied as a function of time, temperature, and annealing environment. Reduction of the oxide seems to be dependent on the presence of Au-Si eutectic as regions free of Au remained intact and samples of Au on bulk glass showed no reactions. The rate of reduction of the oxide proceeds with an activation energy of approximately 26 kcal/mole.

Original languageEnglish
Pages55-57
Number of pages3
StatePublished - 1 Jan 1975
Event22nd Natl Symp on Am Vac Soc - Philadelphia, PA, USA
Duration: 28 Oct 197531 Oct 1975

Conference

Conference22nd Natl Symp on Am Vac Soc
CityPhiladelphia, PA, USA
Period28/10/7531/10/75

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