Interfacial reaction and schottky barrier in metal-silicon systems

G. Ottaviani*, King-Ning Tu, J. W. Mayer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

107 Scopus citations

Abstract

Electronic states at the metal-silicon interface have previously been postulated in order to explain the pinning of the Fermi level, and the origin of these states has been a matter of some dispute. We propose here that in a reactive interface, such as the interface between Si and transition metals, physical properties of the interface are related to an interfacial layer, and that the relationship is manifest through the correlation between Schottky barrier height and eutectic temperature.

Original languageEnglish
Pages (from-to)284-287
Number of pages4
JournalPhysical Review Letters
Volume44
Issue number4
DOIs
StatePublished - 1 Jan 1980

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