Interfacial microstructure and electrical properties of PT/Al 2 O 3 /Si annealed at high temperatures

San-Yuan Chen*, Chi Sheng Hsiao, Jung Jui Hsu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


Pb 1+x TiO 3 (PT) thin films were deposited on Al 2 O 3 (10nm)/Si using lead acetate trihydrate and titanium isopropoxide with the addition of glycerol (GL) chelating agent as precursors. It was found that perovskite PT phase can be well crystallized at a lower temperature of 600°C and excellent memory properties are obtained. However, with increasing annealing temperature above 700°C, charge-injection mode instead of ferroelectric behavior was detected. Cross-sectional TEM results illustrate that with an increase of annealing temperature and Pb content in the PT films, diffusion envelops and even composition separations were detected in the interface of PT/Al 2 O 3 /Si. It was believed that the degradation in the ferroelectric memory properties is strongly related to the change of microstructure and composition in the interface of PT/Al 2 O 3 /Si.

Original languageEnglish
Pages (from-to)429-432
Number of pages4
JournalApplied Surface Science
Issue number1-4 SPEC. ISS.
StatePublished - 15 Nov 2004
EventAPHYS 2003 - Badajoz, Spain
Duration: 13 Oct 200318 Oct 2003


  • Ferroelectric
  • Interfacial microstructure
  • Memory properties
  • PbTiO /Al O /Si

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