Interfacial microstructure and electrical properties of PT/Al 2 O 3 /Si annealed at high temperatures

San-Yuan Chen; Chi Sheng Hsiao; Jung Jui Hsu

doi:10.1016/j.apsusc.2004.05.166

Interfacial microstructure and electrical properties of PT/Al ₂ O ₃ /Si annealed at high temperatures

San-Yuan Chen^*, Chi Sheng Hsiao, Jung Jui Hsu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Pb _1+x TiO ₃ (PT) thin films were deposited on Al ₂ O ₃ (10nm)/Si using lead acetate trihydrate and titanium isopropoxide with the addition of glycerol (GL) chelating agent as precursors. It was found that perovskite PT phase can be well crystallized at a lower temperature of 600°C and excellent memory properties are obtained. However, with increasing annealing temperature above 700°C, charge-injection mode instead of ferroelectric behavior was detected. Cross-sectional TEM results illustrate that with an increase of annealing temperature and Pb content in the PT films, diffusion envelops and even composition separations were detected in the interface of PT/Al ₂ O ₃ /Si. It was believed that the degradation in the ferroelectric memory properties is strongly related to the change of microstructure and composition in the interface of PT/Al ₂ O ₃ /Si.

Original language	English
Pages (from-to)	429-432
Number of pages	4
Journal	Applied Surface Science
Volume	238
Issue number	1-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.apsusc.2004.05.166
State	Published - 15 Nov 2004
Event	APHYS 2003 - Badajoz, Spain Duration: 13 Oct 2003 → 18 Oct 2003

Keywords

Ferroelectric
Interfacial microstructure
Memory properties
PbTiO /Al O /Si

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@article{3c34b0538fa9490690d8e22de1bffe02,

title = "Interfacial microstructure and electrical properties of PT/Al 2 O 3 /Si annealed at high temperatures",

abstract = " Pb 1+x TiO 3 (PT) thin films were deposited on Al 2 O 3 (10nm)/Si using lead acetate trihydrate and titanium isopropoxide with the addition of glycerol (GL) chelating agent as precursors. It was found that perovskite PT phase can be well crystallized at a lower temperature of 600°C and excellent memory properties are obtained. However, with increasing annealing temperature above 700°C, charge-injection mode instead of ferroelectric behavior was detected. Cross-sectional TEM results illustrate that with an increase of annealing temperature and Pb content in the PT films, diffusion envelops and even composition separations were detected in the interface of PT/Al 2 O 3 /Si. It was believed that the degradation in the ferroelectric memory properties is strongly related to the change of microstructure and composition in the interface of PT/Al 2 O 3 /Si.",

keywords = "Ferroelectric, Interfacial microstructure, Memory properties, PbTiO /Al O /Si",

author = "San-Yuan Chen and Hsiao, {Chi Sheng} and Hsu, {Jung Jui}",

year = "2004",

month = nov,

day = "15",

doi = "10.1016/j.apsusc.2004.05.166",

language = "English",

volume = "238",

pages = "429--432",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "1-4 SPEC. ISS.",

note = "null ; Conference date: 13-10-2003 Through 18-10-2003",

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TY - JOUR

T1 - Interfacial microstructure and electrical properties of PT/Al 2 O 3 /Si annealed at high temperatures

AU - Chen, San-Yuan

AU - Hsiao, Chi Sheng

AU - Hsu, Jung Jui

PY - 2004/11/15

Y1 - 2004/11/15

N2 - Pb 1+x TiO 3 (PT) thin films were deposited on Al 2 O 3 (10nm)/Si using lead acetate trihydrate and titanium isopropoxide with the addition of glycerol (GL) chelating agent as precursors. It was found that perovskite PT phase can be well crystallized at a lower temperature of 600°C and excellent memory properties are obtained. However, with increasing annealing temperature above 700°C, charge-injection mode instead of ferroelectric behavior was detected. Cross-sectional TEM results illustrate that with an increase of annealing temperature and Pb content in the PT films, diffusion envelops and even composition separations were detected in the interface of PT/Al 2 O 3 /Si. It was believed that the degradation in the ferroelectric memory properties is strongly related to the change of microstructure and composition in the interface of PT/Al 2 O 3 /Si.

AB - Pb 1+x TiO 3 (PT) thin films were deposited on Al 2 O 3 (10nm)/Si using lead acetate trihydrate and titanium isopropoxide with the addition of glycerol (GL) chelating agent as precursors. It was found that perovskite PT phase can be well crystallized at a lower temperature of 600°C and excellent memory properties are obtained. However, with increasing annealing temperature above 700°C, charge-injection mode instead of ferroelectric behavior was detected. Cross-sectional TEM results illustrate that with an increase of annealing temperature and Pb content in the PT films, diffusion envelops and even composition separations were detected in the interface of PT/Al 2 O 3 /Si. It was believed that the degradation in the ferroelectric memory properties is strongly related to the change of microstructure and composition in the interface of PT/Al 2 O 3 /Si.

KW - Ferroelectric

KW - Interfacial microstructure

KW - Memory properties

KW - PbTiO /Al O /Si

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U2 - 10.1016/j.apsusc.2004.05.166

DO - 10.1016/j.apsusc.2004.05.166

M3 - Conference article

AN - SCOPUS:4644301656

VL - 238

SP - 429

EP - 432

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4 SPEC. ISS.

Y2 - 13 October 2003 through 18 October 2003