An attempt was made to combine the process of PIII and electroless plating techniques in the formation of a copper film on the as-deposited wafers consisting of a-Ta:N and fluorosilicate glass (FSG) lauers. The Cu/a-TaN interfacial and crystallographic structures after the specimen being annealed were analyzed. It was found that as the annealing temperature increased, the interdiffusion zone of the Cu/(Pd)/a-Ta:N assembly tends to be widened. When the PIII Pd was used as a catalyst, the electric resistivity of annealed copper films decreased with increasing annealing temperature. The annealing-free copper film provided a strong <111> texture.
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films|
|State||Published - 1 May 2002|