Interfacial mechanism studies of electroless plated Cu films on a-Ta:N layers catalyzed by PIII

Jian Hong Lin, Tzu Li Lee, Wei Jen Hsieh, Chien-Cheng Lin, Chwung Shan Kou, Han C. Shih*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

An attempt was made to combine the process of PIII and electroless plating techniques in the formation of a copper film on the as-deposited wafers consisting of a-Ta:N and fluorosilicate glass (FSG) lauers. The Cu/a-TaN interfacial and crystallographic structures after the specimen being annealed were analyzed. It was found that as the annealing temperature increased, the interdiffusion zone of the Cu/(Pd)/a-Ta:N assembly tends to be widened. When the PIII Pd was used as a catalyst, the electric resistivity of annealed copper films decreased with increasing annealing temperature. The annealing-free copper film provided a strong <111> texture.

Original languageEnglish
Pages (from-to)733-740
Number of pages8
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume20
Issue number3
DOIs
StatePublished - 1 May 2002

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