Interfacial layer reduction and high permittivity tetragonal ZrO 2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness

Cheng Ming Lin, Hung Chih Chang, I. Hsieh Wong, Shih Jan Luo, C. W. Liu*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The nearly free interfacial layer and the tetragonal phase ZrO 2 with the high permittivity of 45 ± 3 on Ge (001) substrate lead to the equivalent oxide thickness as low as 0.39 nm and the low leakage current density of 2 × 10 -3 A/cm -2 . The ultrathin GeON layer formed by remote plasma treatment on GeO 2 /Ge can inhibit the interfacial layer regrowth by retarding the interdiffusion of Ge and O atoms. The initial ∼1 nm GeO 2 layer is consumed during the remote plasma treatment, confirmed by x-ray photoelectron spectroscopy and further thinned down by post-deposition annealing to trigger the GeO desorption.

Original languageEnglish
Article number232906
JournalApplied Physics Letters
Volume102
Issue number23
DOIs
StatePublished - 10 Jun 2013

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