Interfacial layer-free ZrO 2 on Ge with 0.39-nm EOT, κ∼43, ∼2×10 -3 A/cm 2 gate leakage, SS =85 mV/dec, I on /I off =6×10 5 , and high strain response

Cheng Ming Lin*, Hung Chih Chang, Yen Ting Chen, I. Hsieh Wong, Huang Siang Lan, Shih Jan Luo, Jing Yi Lin, Yi Jen Tseng, C. W. Liu, Chen-Ming Hu, Fu Liang Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

0.39-nm ultrathin EOT ZrO 2 having κ value as high as ∼43 without an interfacial layer (IL) is demonstrated on Ge substrates. The EOT and gate leakage are much lower than the recent reported data [1]. In situ NH 3 /H 2 remote plasma treatment (RPT) after RTO-grown ultrathin (<1nm) GeO 2 /Ge and prior to PEALD ZrO 2 leads to the formation of tetragonal phase ZrO 2 and the inhibition of GeO x IL regrowth. As the number of RPT cycles increases, it is observed that not only higher [N] but more GeO 2 component formed on Ge surface. GeO diffuses into ZrO 2 layer via the interface reaction (Ge+GeO 2 → 2GeO) and stabilize the tetragonal phase ZrO 2 . The gate dielectric has a leakage current ∼10 4 X lower than other reported dielectrics in this EOT region. Ge (001) pMOSFET has low SS of 85 mV/dec and high I on /I off of ∼6×10 5 at V d = -1V, while nMOSFET has SS of 90 mV/dec and I on /I off of ∼1×10 5 at V d =1V. The peak electron mobility is determined by the remote phonon scattering stemming from the high-κ value. The biaxial tensile strain of ∼0.04% applied on Ge (111) nMOSFET with an EOT=0.78nm produces a 4.8% drain current enhancement along the <110> channel.

Original languageEnglish
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
DOIs
StatePublished - 1 Dec 2012
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: 10 Dec 201213 Dec 2012

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period10/12/1213/12/12

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    Lin, C. M., Chang, H. C., Chen, Y. T., Wong, I. H., Lan, H. S., Luo, S. J., Lin, J. Y., Tseng, Y. J., Liu, C. W., Hu, C-M., & Yang, F. L. (2012). Interfacial layer-free ZrO 2 on Ge with 0.39-nm EOT, κ∼43, ∼2×10 -3 A/cm 2 gate leakage, SS =85 mV/dec, I on /I off =6×10 5 , and high strain response. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 [6479086] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6479086