Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs

Yiming Li; Hui Wen Cheng; Yung Yueh Chiu

doi:10.1016/j.mee.2011.03.040

Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs

Yiming Li^*, Hui Wen Cheng, Yung Yueh Chiu

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this work, we study the effect of interface traps (ITs) and random dopants (RDs) on characteristics of 16-nm MOSFETs. Totally random generated devices with 2D ITs between the interface of silicon and HfO₂ film as well as 3D RDs inside the silicon channel are simulated. Fluctuations of threshold voltage and on/off state current for devices with different EOT of insulator film are analyzed and discussed. The results of this study indicate ITs and RDs statistically correlate to each other and RDs govern device variability, compared with the influence of ITs. Notably, the position of ITs and RDs induces rather different fluctuation in spite of the same number of ITs and RDs are investigated.

Original language	English
Pages (from-to)	1269-1271
Number of pages	3
Journal	Microelectronic Engineering
Volume	88
Issue number	7
DOIs	https://doi.org/10.1016/j.mee.2011.03.040
State	Published - Jul 2011

Keywords

Combination of interface trap and random dopant fluctuations
High-κ/metal gate
Interface trap
Interface trap fluctuation
Random dopant
Random dopant fluctuation
Threshold voltage fluctuation

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title = "Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs",

abstract = "In this work, we study the effect of interface traps (ITs) and random dopants (RDs) on characteristics of 16-nm MOSFETs. Totally random generated devices with 2D ITs between the interface of silicon and HfO2 film as well as 3D RDs inside the silicon channel are simulated. Fluctuations of threshold voltage and on/off state current for devices with different EOT of insulator film are analyzed and discussed. The results of this study indicate ITs and RDs statistically correlate to each other and RDs govern device variability, compared with the influence of ITs. Notably, the position of ITs and RDs induces rather different fluctuation in spite of the same number of ITs and RDs are investigated.",

keywords = "Combination of interface trap and random dopant fluctuations, High-κ/metal gate, Interface trap, Interface trap fluctuation, Random dopant, Random dopant fluctuation, Threshold voltage fluctuation",

author = "Yiming Li and Cheng, {Hui Wen} and Chiu, {Yung Yueh}",

year = "2011",

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doi = "10.1016/j.mee.2011.03.040",

language = "English",

volume = "88",

pages = "1269--1271",

journal = "Microelectronic Engineering",

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T1 - Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs

AU - Li, Yiming

AU - Cheng, Hui Wen

AU - Chiu, Yung Yueh

PY - 2011/7

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N2 - In this work, we study the effect of interface traps (ITs) and random dopants (RDs) on characteristics of 16-nm MOSFETs. Totally random generated devices with 2D ITs between the interface of silicon and HfO2 film as well as 3D RDs inside the silicon channel are simulated. Fluctuations of threshold voltage and on/off state current for devices with different EOT of insulator film are analyzed and discussed. The results of this study indicate ITs and RDs statistically correlate to each other and RDs govern device variability, compared with the influence of ITs. Notably, the position of ITs and RDs induces rather different fluctuation in spite of the same number of ITs and RDs are investigated.

AB - In this work, we study the effect of interface traps (ITs) and random dopants (RDs) on characteristics of 16-nm MOSFETs. Totally random generated devices with 2D ITs between the interface of silicon and HfO2 film as well as 3D RDs inside the silicon channel are simulated. Fluctuations of threshold voltage and on/off state current for devices with different EOT of insulator film are analyzed and discussed. The results of this study indicate ITs and RDs statistically correlate to each other and RDs govern device variability, compared with the influence of ITs. Notably, the position of ITs and RDs induces rather different fluctuation in spite of the same number of ITs and RDs are investigated.

KW - Combination of interface trap and random dopant fluctuations

KW - High-κ/metal gate

KW - Interface trap

KW - Interface trap fluctuation

KW - Random dopant

KW - Random dopant fluctuation

KW - Threshold voltage fluctuation

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