Interface trap induced drain leakage current in various n-MOSFET structures

Tse En Chang; Ta-Hui Wang; Chimoon Huang

Interface trap induced drain leakage current in various n-MOSFET structures

Tse En Chang^*, Ta-Hui Wang, Chimoon Huang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

Dominant drain leakage current mechanisms related to hot carrier stress generated interface traps are characterized in various n-MOSFET structures. Our study reveals that the lateral field induced band-trap-band tunneling is primarily responsible for an increased drain leakage current after hot carrier stress in an LDD MOSFET while the vertical field enhanced tunneling is a dominant leakage mechanism in a S/D conventional MOSFET structure.

Original language	English
Pages	291-294
Number of pages	4
State	Published - 1 Dec 1995
Event	Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan Duration: 31 May 1995 → 2 Jun 1995

Conference

Conference	Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications
City	Taipei, Taiwan
Period	31/05/95 → 2/06/95

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title = "Interface trap induced drain leakage current in various n-MOSFET structures",

abstract = "Dominant drain leakage current mechanisms related to hot carrier stress generated interface traps are characterized in various n-MOSFET structures. Our study reveals that the lateral field induced band-trap-band tunneling is primarily responsible for an increased drain leakage current after hot carrier stress in an LDD MOSFET while the vertical field enhanced tunneling is a dominant leakage mechanism in a S/D conventional MOSFET structure.",

author = "Chang, {Tse En} and Ta-Hui Wang and Chimoon Huang",

year = "1995",

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day = "1",

language = "English",

pages = "291--294",

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T1 - Interface trap induced drain leakage current in various n-MOSFET structures

AU - Chang, Tse En

AU - Wang, Ta-Hui

AU - Huang, Chimoon

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Dominant drain leakage current mechanisms related to hot carrier stress generated interface traps are characterized in various n-MOSFET structures. Our study reveals that the lateral field induced band-trap-band tunneling is primarily responsible for an increased drain leakage current after hot carrier stress in an LDD MOSFET while the vertical field enhanced tunneling is a dominant leakage mechanism in a S/D conventional MOSFET structure.

AB - Dominant drain leakage current mechanisms related to hot carrier stress generated interface traps are characterized in various n-MOSFET structures. Our study reveals that the lateral field induced band-trap-band tunneling is primarily responsible for an increased drain leakage current after hot carrier stress in an LDD MOSFET while the vertical field enhanced tunneling is a dominant leakage mechanism in a S/D conventional MOSFET structure.

UR - http://www.scopus.com/inward/record.url?scp=0029543323&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029543323

SP - 291

EP - 294

Y2 - 31 May 1995 through 2 June 1995

ER -

Interface trap induced drain leakage current in various n-MOSFET structures

Abstract

Conference

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