Interface trap induced drain leakage current in various n-MOSFET structures

Tse En Chang*, Ta-Hui Wang, Chimoon Huang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

Dominant drain leakage current mechanisms related to hot carrier stress generated interface traps are characterized in various n-MOSFET structures. Our study reveals that the lateral field induced band-trap-band tunneling is primarily responsible for an increased drain leakage current after hot carrier stress in an LDD MOSFET while the vertical field enhanced tunneling is a dominant leakage mechanism in a S/D conventional MOSFET structure.

Original languageEnglish
Pages291-294
Number of pages4
StatePublished - 1 Dec 1995
EventProceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan
Duration: 31 May 19952 Jun 1995

Conference

ConferenceProceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications
CityTaipei, Taiwan
Period31/05/952/06/95

Fingerprint Dive into the research topics of 'Interface trap induced drain leakage current in various n-MOSFET structures'. Together they form a unique fingerprint.

Cite this