Dominant drain leakage current mechanisms related to hot carrier stress generated interface traps are characterized in various n-MOSFET structures. Our study reveals that the lateral field induced band-trap-band tunneling is primarily responsible for an increased drain leakage current after hot carrier stress in an LDD MOSFET while the vertical field enhanced tunneling is a dominant leakage mechanism in a S/D conventional MOSFET structure.
|Number of pages||4|
|State||Published - 1 Dec 1995|
|Event||Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan|
Duration: 31 May 1995 → 2 Jun 1995
|Conference||Proceedings of the 1995 International Symposium on VLSI Technology, Systems, and Applications|
|Period||31/05/95 → 2/06/95|