Interface state density of atomic layer deposited AI2O3 on J3-Gai03

C. Y. Su, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this study, a dielectric improvement of AI2O3 by atomic layer deposited with a thickness of 40 nm on f)-GiiOi was reported. The flat-band voltage shift and hysteresis can be reduced significantly by post deposition anneal (PDA) in a Al20y/?-Ga203 metal-oxide-semiconductor capacitor (MOSCAP). Also, an interface trap density (Di t) of 7 x 101 2 cm_ 2/eV' was obtained at 0.2 eV from conduction band by Terman method.

Original languageEnglish
Title of host publicationECS Transactions
EditorsJ. Hite, V. Chakrapani, J. Zavada, T. J. Anderson, S. Kilgore
PublisherElectrochemical Society Inc.
Pages27-30
Number of pages4
Edition7
ISBN (Electronic)9781510866171, 9781510866171, 9781510866171, 9781607688280, 9781607688303, 9781607688310, 9781607688327, 9781607688334, 9781607688341, 9781607688358, 9781607688365, 9781607688372, 9781607688389, 9781607688396, 9781607688402
DOIs
StatePublished - 2018
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting - Seattle, United States
Duration: 13 May 201817 May 2018

Publication series

NameECS Transactions
Number7
Volume85
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Wide Bandgap Semiconductor Materials and Devices 19 - 233rd ECS Meeting
CountryUnited States
CitySeattle
Period13/05/1817/05/18

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