Interface Polarization Fluctuation Effect of Ferroelectric Hafnium-Zirconium-Oxide Ferroelectric Memory with Nearly Ideal Subthreshold Slope

Yu Chien Chiu, Chun-Hu Cheng, Chia Chi Fan, Po-Chun Chen, Chun-Yen Chang, Min Hung Lee, Chien Liu, Shiang Shiou Yen, Hsiao-Hsuan Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2015 73rd Annual Device Research Conference (DRC)
StatePublished - 2015

Cite this

Chiu, Y. C., Cheng, C-H., Fan, C. C., Chen, P-C., Chang, C-Y., Lee, M. H., Liu, C., Yen, S. S., & Hsu, H-H. (2015). Interface Polarization Fluctuation Effect of Ferroelectric Hafnium-Zirconium-Oxide Ferroelectric Memory with Nearly Ideal Subthreshold Slope. In 2015 73rd Annual Device Research Conference (DRC)