Interface optimization of AlInP/GaAs multiple quantum wells grown by gas source molecular beam epitaxy

J. M. Kuo, Hao-Chung Kuo, J. Y. Cheng, Y. C. Wang, Y. Lu, W. E. Mayo

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We present a source switching procedure for the growth of abrupt interfaces in AlInP/GaAs multiple quantum well heterostructures grown by gas source molecular beam epitaxy. The switching procedures were optimized through characterization by cathodoluminescence, room temperature absorption, double crystal X-ray diffraction and dynamic simulation, and high resolution transmission electron microscopy. Atomically flat AlInP-on-GaAs and GaAs-on-AlInP interfaces were obtained by avoiding exposure of the GaAs surface to phosphorous before the growth of AlInP and by optimizing the pump-out intervals of the residual As2 and P2 between layers. The optimum pump-out interval was determined to be 20 s for As2, and 10 s for P2.

Original languageEnglish
Pages (from-to)393-398
Number of pages6
JournalJournal of Crystal Growth
Volume158
Issue number4
DOIs
StatePublished - 1 Jan 1996

Fingerprint Dive into the research topics of 'Interface optimization of AlInP/GaAs multiple quantum wells grown by gas source molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this