Interface morphology investigation of bonded p-GaAs/p-Si wafers

Cheng Yu Hsieh*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The integration of GaAs and Si can combine the superior electrical and optical properties of GaAs with the mechanical and economical advantages of Si. It presents great potential for OEICs applications. In this study, direct wafer bonding was applied to combine bulk p-Si and p-GaAs. Interface morphologies of bonded p-GaAs/p-Si wafers were investigated by TEM.

Original languageEnglish
Title of host publicationSemiconductor Wafer Bonding 11
Subtitle of host publicationScience, Technology, and Applications - In Honor of Ulrich Gosele
Pages371-374
Number of pages4
Edition4
DOIs
StatePublished - 1 Dec 2010
EventSemiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 10 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number4
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSemiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1015/10/10

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  • Cite this

    Hsieh, C. Y., & Wu, Y-C. (2010). Interface morphology investigation of bonded p-GaAs/p-Si wafers. In Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele (4 ed., pp. 371-374). (ECS Transactions; Vol. 33, No. 4). https://doi.org/10.1149/1.3483526