Interface induced uphill diffusion of boron: An effective approach for ultrashallow junction

Howard Chih Hao Wang, Chih Chiang Wang, Chih Sheng Chang, Ta-Hui Wang, Peter B. Griffin, Carlos H. Diaz

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

This paper investigates anomalous diffusion behavior for ultra low energy implants in the extension or tip of PMOS devices. Transient enhanced diffusion (TED) is minimal at these low energies, since excess interstitials are very close to the surface. Instead, interface induced uphill diffusion is found, for the first time, to dominate during low temperature thermal cycles. The interface pile-up dynamics can be taken advantage of to produce shallower junctions and improve short channel effect control in PMOS devices. Attempts to minimize TED before spacer deposition by inclusion of extra RTA anneals are shown to be detrimental to forming boron ultra shallow junctions.

Original languageEnglish
Pages (from-to)65-67
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number2
DOIs
StatePublished - 1 Feb 2001

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