Interface Engineering via MoS 2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory

Facai Wu, Shuyao Si, Peng Cao, Wei Wei, Xiaolong Zhao, Tuo Shi*, Xumeng Zhang, Jianwei Ma, Rongrong Cao, Lei Liao, Tseung-Yuen Tseng, Qi Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Conductive-bridging random access memory (CBRAM), dominated by conductive filament (CF) formation/rupture, has received much attention due to its simple structure and outstanding performances for nonvolatile memory, neuromorphic computing, digital logic, and analog circuit. However, the negative-SET behavior can degrade device reliability and parameter uniformity. And large RESET current increases power consumption for memory applications. By inserting 2D material, molybdenum disulfide (MoS 2 ), for interface engineering with the device configuration of Ag/ZrO 2 /MoS 2 /Pt, the negative-SET behavior is eliminated, and the RESET current is reduced simultaneously. With the ion barrier property of MoS 2 , the CF can probably not penetrate the MoS 2 layer, thus eliminating the negative-SET behavior. And with the low thermal conductivity of MoS 2 , the internal temperature of the device would be relatively high at RESET, accelerating probably redox reactions. As a result, the RESET current is reduced by an order of magnitude. This interface engineering opens up a way in improving the resistive switching performances of CBRAM, and can be of great benefit to the potential applications of MoS 2 in next-generation data storage.

Original languageEnglish
Article number1800747
JournalAdvanced Electronic Materials
Issue number4
StatePublished - 1 Apr 2019


  • conductive filaments
  • conductive-bridging random access memory
  • electrochemical reactions
  • ion barriers
  • molybdenum disulfide

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