Interface control of bulk ferroelectric polarization

P. Yu*, W. Luo, D. Yi, J. X. Zhang, M. D. Rossell, C. H. Yang, L. You, G. Singh-Bhalla, S. Y. Yang, Q. He, Q. M. Ramasse, R. Erni, L. W. Martin, Ying-hao Chu, S. T. Pantelides, S. J. Pennycook, R. Ramesh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

150 Scopus citations

Abstract

The control of material interfaces at the atomic level has led to novel interfacial properties and functionalities. In particular, the study of polar discontinuities at interfaces between complex oxides lies at the frontier of modern condensed matter research. Here we employ a combination of experimental measurements and theoretical calculations to demonstrate the control of a bulk property, namely ferroelectric polarization, of a heteroepitaxial bilayer by precise atomic-scale interface engineering. More specifically, the control is achieved by exploiting the interfacial valence mismatch to influence the electrostatic potential step across the interface, which manifests itself as the biased-voltage in ferroelectric hysteresis loops and determines the ferroelectric state. A broad study of diverse systems comprising different ferroelectrics and conducting perovskite underlayers extends the generality of this phenomenon.

Original languageEnglish
Pages (from-to)9710-9715
Number of pages6
JournalProceedings of the National Academy of Sciences of the United States of America
Volume109
Issue number25
DOIs
StatePublished - 19 Jun 2012

Keywords

  • Complex oxide
  • Electronic reconstruction
  • Heterostructure
  • Interface physics
  • Polar discontinuity

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