Interdiffusion in copper-aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation

H. T.G. Hentzell*, R. D. Thompson, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

Interdiffusion in Cu-Al thin film bilayers at temperatures between 160 and 300 °C has been studied by a combination of glancing-incidence x-ray diffraction, Rutherford backscattering spectroscopy, and transmission electron diffraction and microscopy. A sequential intermetallic compound formation was observed in samples with an excess amount of Cu with θ-CuAl 2 forming first, followed by η 2 -CuAl, and γ 2 - Cu 9 Al 4 . In samples with excess Al, the θ-CuAl 2 is the first and the last phase formed. The thickening of these compounds was found to obey a parabolic relationship with time, and especially the thickening of θ-CuAl 2 can be described by a prefactor of 7.4 cm 2 /s and an activation energy of 1.31 eV.

Original languageEnglish
Pages (from-to)6923-6928
Number of pages6
JournalJournal of Applied Physics
Volume54
Issue number12
DOIs
StatePublished - 1 Dec 1983

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