Intercrossed ZnS nanostructures doped with Ga (ZnS:Ga nanowalls) have been synthesized in high yield from mixed powders in a vacuum furnace. ZnS:Ga nanowalls were grown vertically on the substrate with the size in the range of several micrometers and the thickness down to similar to 15 nm and have very rough edges. Due to the high surface area and distinctive morphology of ZnS:Ga nanowalls, the photocatalytic activity and the photoresponse show superior properties compared to ZnS:Ga films. The increased conductivity of metal-semiconductor-metal (Ag-ZnS:Ga nanowalls-Ag) Schottky photodetectors under light illumination is attributed to the photogenerated electron-hole pairs, the desorption of oxygen molecules on the ZnS:Ga surface, and the lowering of the Schottky barrier height. The results indicate that ZnS:Ga nanowalls are promising candidate materials for photocatalysts and applicable as photodetectors, optical switches, and sensors in the visible light region.
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