A 5.2 GHz 0.18-μm SiGe BiCMOS low noise amplifier is implemented with guided-wave interconnections in this letter. These interconnections reduce the substrate skin and proximity effects and hence are suitable for high frequency circuits. The guided interconnections bring 1.7-dB gain and 0.55-dB noise figure enhancement for the low noise amplifier. In addition, accurate and simple design methodology relies on the complete models of components and interconnections when the postsimulation from the re extraction is not enough for the high frequency circuit design. The measurement results give excellent agreements with the schematic simulation.
- Low noise amplifier
- SiGe BiCMOS