Interband tunneling between valence-band and conduction-band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple-barrier structure

Jenn-Fang Chen; A. Y. Cho

doi:10.1063/1.351772

Interband tunneling between valence-band and conduction-band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple-barrier structure

Jenn-Fang Chen^*, A. Y. Cho

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report on the experimental studies of an interband tunneling effect between GaSb valence-band and InAs conduction-band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple-barrier interband tunneling device. Multiple negative differential resistances were observed both at room temperature and 77 K. By varying the InAs well width to adjust the alignment of the conduction-band and the valence-band quasi-bound states, we observed more than one order of magnitude variation in the peak current density, indicating a significant quantization effect. Possible current conduction mechanisms were discussed based on the dependence of the peak-current density on the InAs well width.

Original language	English
Pages (from-to)	960-963
Number of pages	4
Journal	Journal of Applied Physics
Volume	72
Issue number	3
DOIs	https://doi.org/10.1063/1.351772
State	Published - 1 Dec 1992

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title = "Interband tunneling between valence-band and conduction-band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple-barrier structure",

abstract = "We report on the experimental studies of an interband tunneling effect between GaSb valence-band and InAs conduction-band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple-barrier interband tunneling device. Multiple negative differential resistances were observed both at room temperature and 77 K. By varying the InAs well width to adjust the alignment of the conduction-band and the valence-band quasi-bound states, we observed more than one order of magnitude variation in the peak current density, indicating a significant quantization effect. Possible current conduction mechanisms were discussed based on the dependence of the peak-current density on the InAs well width.",

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AU - Cho, A. Y.

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N2 - We report on the experimental studies of an interband tunneling effect between GaSb valence-band and InAs conduction-band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple-barrier interband tunneling device. Multiple negative differential resistances were observed both at room temperature and 77 K. By varying the InAs well width to adjust the alignment of the conduction-band and the valence-band quasi-bound states, we observed more than one order of magnitude variation in the peak current density, indicating a significant quantization effect. Possible current conduction mechanisms were discussed based on the dependence of the peak-current density on the InAs well width.

AB - We report on the experimental studies of an interband tunneling effect between GaSb valence-band and InAs conduction-band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple-barrier interband tunneling device. Multiple negative differential resistances were observed both at room temperature and 77 K. By varying the InAs well width to adjust the alignment of the conduction-band and the valence-band quasi-bound states, we observed more than one order of magnitude variation in the peak current density, indicating a significant quantization effect. Possible current conduction mechanisms were discussed based on the dependence of the peak-current density on the InAs well width.

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