Integration of thin film transistor controlled carbon nanotubes for field emission devices

Huang-Chung Cheng; Wei Kai Hong; Fu Gow Tarntair; Kuo Ji Chen; Jia Bin Lin; Kuei Hsien Chen; Li Chiung Chen

doi:10.1149/1.1354497

Integration of thin film transistor controlled carbon nanotubes for field emission devices

Huang-Chung Cheng^*, Wei Kai Hong, Fu Gow Tarntair, Kuo Ji Chen, Jia Bin Lin, Kuei Hsien Chen, Li Chiung Chen

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A new field emission device composed of carbon nanotubes and a thin film transistor (TFT) has been successfully demonstrated to significantly improve emission stability. Carbon nanotubes are directly integrated in the drain region of the TFT and the emission current from the carbon nanotubes is controlled via the TFT drain current. The fluctuation of the emission current of the TFT-controlled carbon nanotubes can be suppressed to less than 2%, below the fluctuation of uncontrolled carbon nanotubes. The novel field emission device exhibits low-voltage controllability, good emission stability, and structural simplicity, making it promising for application to future field-emission display.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	4
Issue number	4
DOIs	https://doi.org/10.1149/1.1354497
State	Published - 1 Apr 2001

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abstract = "A new field emission device composed of carbon nanotubes and a thin film transistor (TFT) has been successfully demonstrated to significantly improve emission stability. Carbon nanotubes are directly integrated in the drain region of the TFT and the emission current from the carbon nanotubes is controlled via the TFT drain current. The fluctuation of the emission current of the TFT-controlled carbon nanotubes can be suppressed to less than 2%, below the fluctuation of uncontrolled carbon nanotubes. The novel field emission device exhibits low-voltage controllability, good emission stability, and structural simplicity, making it promising for application to future field-emission display.",

author = "Huang-Chung Cheng and Hong, {Wei Kai} and Tarntair, {Fu Gow} and Chen, {Kuo Ji} and Lin, {Jia Bin} and Chen, {Kuei Hsien} and Chen, {Li Chiung}",

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AU - Cheng, Huang-Chung

AU - Hong, Wei Kai

AU - Tarntair, Fu Gow

AU - Chen, Kuo Ji

AU - Lin, Jia Bin

AU - Chen, Kuei Hsien

AU - Chen, Li Chiung

PY - 2001/4/1

Y1 - 2001/4/1

N2 - A new field emission device composed of carbon nanotubes and a thin film transistor (TFT) has been successfully demonstrated to significantly improve emission stability. Carbon nanotubes are directly integrated in the drain region of the TFT and the emission current from the carbon nanotubes is controlled via the TFT drain current. The fluctuation of the emission current of the TFT-controlled carbon nanotubes can be suppressed to less than 2%, below the fluctuation of uncontrolled carbon nanotubes. The novel field emission device exhibits low-voltage controllability, good emission stability, and structural simplicity, making it promising for application to future field-emission display.

AB - A new field emission device composed of carbon nanotubes and a thin film transistor (TFT) has been successfully demonstrated to significantly improve emission stability. Carbon nanotubes are directly integrated in the drain region of the TFT and the emission current from the carbon nanotubes is controlled via the TFT drain current. The fluctuation of the emission current of the TFT-controlled carbon nanotubes can be suppressed to less than 2%, below the fluctuation of uncontrolled carbon nanotubes. The novel field emission device exhibits low-voltage controllability, good emission stability, and structural simplicity, making it promising for application to future field-emission display.

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