Integration of hetero-structure body-tied Ge FinFET using retrograde-well implantation

Yu Che Chou, Chung Chun Hsu, Cheng Ting Chun, Chen Han Chou, Ming Li Tsai, Yi He Tsai, Wei Li Lee, Shin Yuan Wang, Guang Li Luo, Chao-Hsin Chien*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this work, we investigated the influence of retrograde-well implantation on hetero-structure body-tied germanium (Ge) FinFET [1]. Using structural engineering, the retrograde well was fabricated prior to Ge epitaxy, which could avoid the activated temperature of dopant in Si substrate. With optimizing the implant condition, the p-Ge/n-Si hetero-structure junction exhibited high ION/IOFF ratio and lower junction leakage (4 × 10-3 μA/cm2). Furthermore, we also make a comparison of planar and mesa junction structures, mesa junction exhibited lower junction leakage (6× 10-6 μA/cm2) as compared with the planar one mentioned before, which could be attributed to improvement in peripheral leakage due to dislocation within Ge and Si. Comparing the difference between retrograde-well and implant-free Ge FinFETs, the drain induced barrier lowering (DIBL) was considerably improved by 50 %. Our retrograde-well Ge FinFET exhibited a high ION/IOFF ratio ∼ 8×103 (IS) than the conventional Ge FinFET (ION/IOFF ∼2×103).

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages142-144
Number of pages3
ISBN (Electronic)9781509039142
DOIs
StatePublished - Aug 2016
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 22 Aug 201625 Aug 2016

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Conference

Conference16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period22/08/1625/08/16

Keywords

  • Body-tied Ge FinFET
  • DIBL (drain-induced barrier lowering)
  • Implantation
  • Retrograde-well

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